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| NPN Silicon RF Transistor q q BFR 93P For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFR 93P Marking GG Ordering Code (tape and reel) Q62702-F1051 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS 65 C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj TA Tstg Values 15 20 2.5 50 10 280 150 - 65 ... + 150 - 65 ... + 150 Unit V mA mW C 385 305 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) BFR 93P Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 25 mA, VCE = 5 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V(BR)CE0 ICB0 - - IEB0 hFE VCEsat - 30 - - - - 100 0.2 0.05 10 100 - 0.5 - V 15 - - V A Values typ. max. Unit BFR 93P Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 30 mA, VCE = 5 V, f = 200 MHz IC = 50 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, f = 10 MHz,ZS = 75 IC = 5 mA, VCE = 8 V, f = 500 MHz,ZS = ZSopt IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Power gain IC = 25 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt Transducer gain IC = 25 mA, VCE = 8 V, f = 500 MHz, Z0 = 50 Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 8 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 25 mA, VCE = 8 V, f = 800 MHz fT - - Ccb Cce Cibo Cobs F - - - Gpe - 1.7 1.9 2.4 13 - - - - - - - - 5 4.7 0.6 0.28 2.1 0.9 - - 0.75 - - - dB pF GHz Values typ. max. Unit I S21e I 2 - 15.8 240 - - mV Vo1 = Vo2 - IP3 - 30.5 - dBm BFR 93P Total power dissipation Ptot = f (TA*; TS) * Package mounted on alumina Transition frequency fT = f (IC) VCE = 5 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz BFR 93P Common Emitter Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB IC = 2 mA, VCE = 8 V, Z0 = 50 0.01 1.0 - (ZS = 150 ) - - 1.6 - IC = 10 mA, VCE = 8 V, Z0 = 50 0.01 0.8 1.5 2.3 - - (ZS = 90 ) (ZS = ZSopt) - - - - 1.7 2.4 - - Noise figure F = f (ZS) VCE = 8 V, f = 10 MHz Noise figure F = f (IC) VCE = 8 V, f = 800 MHz, ZLopt (G) BFR 93P Common Emitter S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 5 mA, VCE = 8 V, Z0 = 50 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.74 0.51 0.40 0.32 0.31 0.31 0.31 0.32 0.33 0.35 - 34 - 92 - 125 - 157 - 171 177 166 156 146 137 12.96 7.50 5.13 3.35 2.71 2.32 2.05 1.84 1.64 1.52 143 113 97 78 72 65 59 52 47 42 0.03 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 70 55 55 57 59 60 62 61 61 61 0.87 0.65 0.54 0.48 0.48 0.46 0.45 0.45 0.45 0.44 - 14 - 31 - 33 - 32 - 35 - 38 - 41 - 46 - 49 - 52 S11, S22 = f (f) IC = 5 mA, VCE = 8 V, Z0 = 50 S12, S21 = f (f) IC = 5 mA, VCE = 8 V, Z0 = 50 BFR 93P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 10 mA, VCE = 8 V, Z0 = 50 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.58 0.37 0.30 0.25 0.25 0.26 0.26 0.28 0.29 0.31 - 49 - 108 - 139 - 170 180 169 160 151 142 133 18.73 9.17 5.92 3.85 3.09 2.63 2.33 2.07 1.84 1.72 133 105 90 76 70 64 58 52 48 43 0.03 0.05 0.07 0.10 0.13 0.15 0.17 0.20 0.22 0.24 68 60 63 65 65 64 64 62 61 60 0.77 0.53 0.45 0.41 0.40 0.39 0.38 0.38 0.38 0.36 - 19 - 32 - 32 - 31 - 34 - 37 - 40 - 44 - 47 - 49 S11, S22 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 S12, S21 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 BFR 93P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 20 mA, VCE = 8 V, Z0 = 50 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.41 0.28 0.25 0.23 0.23 0.25 0.25 0.27 0.28 0.30 - 64 - 123 - 151 - 179 172 164 155 147 139 131 22.91 9.89 6.24 4.03 3.22 2.74 2.41 2.14 1.92 1.79 123 98 86 74 69 63 57 51 47 42 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 67 66 68 68 68 66 66 63 61 60 0.67 0.46 0.40 0.37 0.37 0.35 0.35 0.35 0.35 0.33 - 22 - 30 - 30 - 28 - 32 - 35 - 38 - 43 - 46 - 48 S11, S22 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 S12, S21 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 BFR 93P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 25 mA, VCE = 8 V, Z0 = 50 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.37 0.26 0.24 0.22 0.23 0.24 0.25 0.27 0.28 0.30 - 68 - 127 - 154 179 170 162 153 146 138 130 23.71 9.89 6.20 3.98 3.18 2.71 2.37 2.11 1.89 1.77 120 97 85 73 68 62 57 51 47 42 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 67 67 70 69 68 66 66 63 62 60 0.64 0.44 0.39 0.37 0.37 0.36 0.36 0.35 0.35 0.34 - 22 - 29 - 28 - 27 - 31 - 35 - 37 - 42 - 46 - 48 S11, S22 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 S12, S21 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 |
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